E3M0900170D

$5.24

Description：SIC, MOSFET, 900M, 1700V, TO-247
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:6b2ac20ca792 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 900M, 1700V, TO-247
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id：4.5V @ 550µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1.2 kV
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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E3M0900170D

Overview

The Wolfspeed E3M0900170D is a 1700V N-Channel Enhancement Mode Silicon Carbide Power MOSFET in a TO-247-3L package. It features a maximum drain-source voltage of 1700V and an on-state resistance of 900mΩ at 25°C. The device supports continuous drain currents up to 4.4A at 25°C and 3.3A at 100°C case temperature, with a pulsed current capability of 15A. Operating junction temperatures range from -55°C to +175°C. It is AEC-Q101 qualified for automotive applications.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Compatible with standard flyback controllers using 12V to 15V gate drive voltages
Ultra-low drain-gate capacitance for high-speed switching
Halogen-free and RoHS compliant construction

Applications

Auxiliary power supplies
Switch mode power supplies
High-voltage capacitive loads

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component meets all applicable environmental and reliability standards for your target market. Ensure proper handling procedures are followed due to moisture sensitivity. Review the latest datasheet revision for any updates to electrical characteristics or thermal limits before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high blocking voltage and low conduction losses in compact packages. Consider the thermal resistance and derating curves when determining heat sink requirements. Verify compatibility with existing gate driver circuits given the specified operational gate-source voltage range. Evaluate system efficiency improvements against potential cost implications compared to alternative technologies.

Part Context

This part belongs to Wolfspeed's third-generation silicon carbide MOSFET portfolio. It is designed to support onboard automotive applications including battery electric vehicles, plug-in hybrid electric vehicles, and fuel cell electric vehicles. The device offers improved power conversion performance metrics regarding efficiency, density, and reliability.