E3M0900170J-TR

$5.24

Description：SIC, MOSFET, 900M, 1700V, TO-263
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e433f787ae58 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 900M, 1700V, TO-263
Series：-
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id：4.2V @ 550µA
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1.2 kV
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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E3M0900170J-TR

Overview

The Wolfspeed E3M0900170J-TR is a silicon carbide (SiC) N-channel enhancement mode power MOSFET designed for high-voltage applications. It features a 1700V drain-source breakdown voltage and a maximum on-resistance of 1250mΩ at 25°C, with a typical value of 900mΩ. The device operates within a junction temperature range of -55°C to +175°C and supports an operational gate-source voltage of +12V to +15V. Packaged in a TO-263-7L form factor, it is automotive qualified under AEC-Q101 standards.

Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Compatible with standard flyback controllers via 12V to 15V gate drive requirements
Ultra-low drain-gate capacitance for reduced switching losses
Halogen-free and RoHS compliant construction

Applications

Auxiliary power supplies
Switch Mode Power Supplies (SMPS)
High-voltage capacitive loads

Procurement Notes

Verify the specific suffix '-TR' indicates tape-and-reel packaging when ordering. Confirm that the component meets AEC-Q101 automotive reliability requirements if intended for vehicle systems. Ensure the design accommodates the specified transient gate-source voltage limits and thermal management needs for the TO-263-7L package.

Selection Notes

Select this component for designs requiring high blocking voltage combined with low conduction losses. The wide operating temperature range supports demanding thermal environments. Verify compatibility with existing gate driver voltages, as the device is optimized for 12V to 15V operation rather than legacy 10V levels.

Part Context

This part belongs to Wolfspeed's third-generation silicon carbide MOSFET portfolio. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The product line targets high-efficiency power conversion systems where size, weight, and thermal performance are critical constraints.