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Product Detailed Parameters
- Description：13M, 1200V, SIC FET TO-247, AUTO
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：17mOhm @ 84.29A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 23.18mA
- Gate Charge (Qg) (Max) @ Vgs：293 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：7407 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：517W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The Wolfspeed E4M0013120K is an N-channel enhancement mode Silicon Carbide (SiC) MOSFET from the E-Series, utilizing fourth-generation technology. It features a TO-247-4L package with a separate driver source pin and 8mm creepage distance. Key electrical parameters include a 1200V drain-source voltage, a typical on-resistance of 13mΩ at 25°C, and a continuous drain current of 153A at 25°C case temperature. The device supports a junction temperature range of -55°C to +175°C and is AEC-Q101 qualified.
Feature Summary
- E4M generation SiC MOSFET technology optimized for automotive applications
- Separate driver source pin in the package to minimize gate ringing
- High blocking voltage combined with low on-resistance
- Fast intrinsic diode with low reverse recovery charge
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm that the specific order includes AEC-Q101 qualification documentation and PPAP capability records as required for automotive supply chains. Ensure the received package matches the TO-247-4L outline drawing specifications provided in the datasheet.
Selection Notes
Select this component for high-voltage systems requiring low switching losses and high efficiency. The separate driver source pin facilitates cleaner gate drive signals, reducing electromagnetic interference. Consider the thermal resistance and power dissipation limits when designing heat sinks for continuous operation at elevated case temperatures.
Part Context
This part belongs to the Wolfspeed E-Series discrete Silicon Carbide MOSFETs, designed for onboard automotive applications including BEVs, PHEVs, and FCEVs. The E4M series represents the fourth generation of Wolfspeed's SiC technology, offering improved switching performance compared to previous generations while maintaining robust reliability standards.
Replacement Considerations
Direct replacements within the same family include E4MS047120K and E4MS025120K, which share similar packaging but differ in on-resistance ratings. Cross-generation substitutes like E3M0013120K are available but may exhibit different switching characteristics due to third-generation technology differences.
