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Product Detailed Parameters
- Description：MOSFETS AUTOMOTIVE 372W 3.8V NC
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：21mOhm @ 55.8A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 15.4mA
- Gate Charge (Qg) (Max) @ Vgs：191 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：5128 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：372W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The Wolfspeed E4M0015075K1 is an N-Channel Enhancement Mode Silicon Carbide Power MOSFET from the E-Series, designed for automotive applications. It features a TO-247-4L package with a separate driver source pin to minimize gate ringing. Key electrical parameters include a maximum drain-source voltage of 750 V and a typical on-resistance of 15 mΩ at 25°C. The device supports continuous drain currents up to 117 A at 25°C case temperature and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Optimized package design incorporating a separate driver source pin to reduce switching losses and minimize gate ringing.
- High blocking voltage capability combined with low on-resistance to enhance system efficiency.
- Fast intrinsic diode characterized by low reverse recovery charge (Qrr) for improved performance in hard-switching topologies.
- Automotive qualified under AEC-Q101 standards with PPAP capability for onboard vehicle integration.
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm that the specific order includes AEC-Q101 qualification documentation and PPAP records if required for automotive supply chain compliance. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for high-voltage automotive power conversion systems requiring robust reliability. The TO-247-4L package facilitates efficient heat dissipation for high-current applications. Consider the separate driver source pin when designing gate drive circuits to optimize switching performance and electromagnetic interference characteristics.
Part Context
This part belongs to the Wolfspeed E-Series, which comprises discrete silicon carbide MOSFETs qualified for automotive use. The series supports various onboard applications including battery electric vehicles, plug-in hybrids, and fuel cell vehicles. These devices are engineered to improve power conversion efficiency, density, and reliability across different voltage platforms.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the purpose of the separate driver source pin?
The separate driver source pin is included to optimize the package layout, allowing for reduced switching losses and minimized gate ringing during operation.
Is this component suitable for harsh automotive environments?
Yes, the E4M0015075K1 is AEC-Q101 qualified and PPAP capable, ensuring it meets the durability and reliability requirements for automotive onboard applications.
