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Product Detailed Parameters
- Description：MOSFETS 3055 PF 281W 3.8V 114 NC
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：34mOhm @ 33.5A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 9.22mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3055 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：281W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed E4M0025075J2-TR is an N-channel enhancement mode silicon carbide MOSFET rated at 750V. It features a maximum on-state resistance of 34 mΩ and a continuous drain current of 77 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2.6 V typical, total gate charge of 114 nC, and input capacitance of 3055 pF. It utilizes a TO-263-7XL package with a separate Kelvin source pin.
Feature Summary
- Automotive qualified (AEC-Q101) and PPAP capable for onboard EV applications
- Optimized package design with a dedicated driver source pin to minimize gate ringing
- High-speed switching characteristics with low capacitances and fast intrinsic diode
- Halogen-free and RoHS compliant construction
Applications
- Motor Control
- EV On Board Battery Chargers (OBC)
- Automotive DC/DC Converters for EV/HEV
Procurement Notes
Verify the specific ordering suffix '-TR' corresponds to the tape and reel packaging format required for automated assembly processes. Confirm that the component meets all necessary automotive quality standards and regulatory compliance requirements for the intended deployment environment before finalizing procurement orders.
Selection Notes
Select this component for high-efficiency power conversion systems requiring robust thermal performance and low conduction losses. Ensure the application circuitry supports the specified gate drive voltages and accounts for the device's switching energy characteristics to optimize system efficiency and manage thermal dissipation effectively.
Part Context
This discrete silicon carbide MOSFET belongs to the E-Series portfolio designed for demanding automotive environments. It supports various electric vehicle architectures including BEVs, PHEVs, and FCEVs. The technology enables improved power density and reliability across different switching topologies used in modern electric mobility solutions.
Replacement Considerations
Consult official Wolfspeed documentation for verified substitute part numbers or alternative packages within the same voltage and current ratings. Do not assume functional equivalence with other manufacturers' components without rigorous validation against the specific datasheet parameters.
