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Product Detailed Parameters
- Description：MOSFETS AUTOMOTIVE 262W 3.8V NC
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：34mOhm @ 33.5A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 9.22mA
- Gate Charge (Qg) (Max) @ Vgs：119 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：3055 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：262W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4L
- Package / Case：TO-247-4
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Overview
The Wolfspeed E4M0025075K1 is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET from the E-Series Automotive family. It features a TO-247-4L package with a separate driver source pin to minimize gate ringing. The device provides a maximum drain-source voltage of 750 V and a typical on-state resistance of 25 mΩ at 25°C. Continuous drain current reaches 74 A at a case temperature of 25°C, while the internal body diode supports 45 A continuous forward current. Operating junction temperatures range from -55°C to +175°C.
Feature Summary
- Optimized package design incorporating a dedicated driver source pin to reduce switching losses and minimize gate ringing.
- High blocking voltage capability combined with low on-resistance for improved system efficiency.
- Fast intrinsic diode characterized by low reverse recovery charge and short reverse recovery time.
- Automotive qualified under AEC-Q101 standards and capable of PPAP submission.
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific order matches the TO-247-4L package marking E4M0025075K1. Ensure compliance with RoHS directives and REACH SVHC requirements prior to integration into final assemblies.
Selection Notes
Select this component for high-voltage applications requiring automotive reliability and optimized thermal performance. The separate driver source pin facilitates precise gate control in high-frequency environments. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance values.
Part Context
This part belongs to the Wolfspeed E-Series Automotive SiC MOSFET lineup. It utilizes silicon carbide technology to achieve superior power density compared to traditional silicon devices. The TO-247-4L form factor allows for efficient mounting and heat dissipation in industrial and electric vehicle power modules.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet.
FAQ
What is the purpose of the fourth pin in the TO-247-4L package?
The fourth pin serves as a separate driver source connection. This design isolates the high-current source path from the sensitive gate drive return, reducing ground bounce and minimizing gate ringing during switching transitions.
Is this component suitable for harsh automotive environments?
Yes, the E4M0025075K1 is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous reliability and quality standards required for automotive electronics applications.
