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Product Detailed Parameters
- Description：MOSFETS 1205 PF 131W 3.8V 50 NC
- Series：E
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：78mOhm @ 13.4A, 15V
- Vgs(th) (Max) @ Id：3.8V @ 3.67mA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1205 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：131W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed E4M0060075J2-TR is an N-channel enhancement mode Silicon Carbide MOSFET rated for 750V drain-source voltage. It features a TO-263-7XL package with a maximum continuous drain current of 36A at 25°C case temperature and a typical on-resistance of 60mΩ. The device operates within a junction temperature range of -55°C to +175°C, supports a gate-source voltage of -8V to +19V, and has a total gate charge of 52nC. It includes a separate Kelvin source pin for optimized driver performance.
Feature Summary
- Automotive qualified under AEC-Q101 standards with PPAP capability
- Optimized package design featuring a separate driver source pin to minimize gate ringing
- High-speed switching characteristics enabled by low capacitances
- Fast intrinsic body diode with low reverse recovery charge
Applications
- Motor Control
- EV On Board Battery Chargers (OBC)
- Automotive DC/DC Converters for EV/HEV
Procurement Notes
Verify the specific suffix '-TR' indicates tape-and-reel packaging when ordering. Confirm that the component meets RoHS compliance and REACH SVHC requirements for your region. Ensure the procurement channel provides valid traceability documentation required for automotive-grade components.
Selection Notes
Select this component for applications requiring high efficiency and power density in automotive environments. The TO-263-7XL package facilitates surface mount assembly while providing robust thermal dissipation. Consider the separate Kelvin source pin for precise gate drive control in high-frequency switching topologies.
Part Context
This part belongs to the Wolfspeed E-Series discrete Silicon Carbide MOSFETs designed for onboard automotive applications. It supports various electric vehicle architectures including BEVs, PHEVs, and FCEVs. The series offers multiple voltage ratings and packages to optimize system reliability and performance metrics.
Replacement Considerations
Consult official Wolfspeed documentation for verified cross-reference part numbers. Do not substitute with generic SiC devices without validating electrical parameters and package compatibility against the datasheet specifications.
