E4M0060075K1

$9.64

Description：MOSFETS AUTOMOTIVE 126W 3.8V NC
Series：E
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:465277a5b3be Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFETS AUTOMOTIVE 126W 3.8V NC
Series：E
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：78mOhm @ 13.4A, 15V
Vgs(th) (Max) @ Id：3.8V @ 3.67mA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1203 pF @ 500 V
FET Feature：-
Power Dissipation (Max)：126W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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E4M0060075K1

Overview

The Wolfspeed E4M0060075K1 is a fourth-generation automotive-grade Silicon Carbide (SiC) MOSFET in a TO-247-4L package. It features an N-channel enhancement mode configuration with a maximum drain-source voltage of 750 V and a continuous drain current of 33 A at 25°C case temperature. The device exhibits a typical on-state resistance of 60 mΩ and supports junction temperatures up to 175°C.

Feature Summary

Optimized package design incorporating a separate driver source pin to minimize gate ringing and reduce switching losses.
High blocking voltage combined with low on-resistance for improved system efficiency and reduced cooling requirements.
Fast intrinsic diode characteristics featuring low reverse recovery charge to enhance performance in hard-switching applications.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix K1 against the manufacturer's official documentation to confirm the exact reel or tube packaging configuration. Confirm RoHS compliance status and REACH SVHC declarations directly with the supplier prior to procurement to ensure adherence to regional regulatory standards.

Selection Notes

Select this component for high-voltage applications requiring automotive reliability and optimized thermal management. The dedicated driver source pin facilitates precise gate control, making it suitable for designs prioritizing high switching frequencies and minimized electromagnetic interference within compact power modules.

Part Context

This part belongs to the Wolfspeed E-Series Automotive lineup, representing the fourth generation of SiC technology. It is designed to replace legacy silicon IGBTs or earlier SiC generations in electric vehicle traction inverters and charging systems where higher power density and lower conduction losses are critical.

Replacement Considerations

Direct replacements include the E4M0045075K1 for lower on-resistance needs or the E4M0090075K1 for higher current tolerance. Verify pinout compatibility and thermal resistance specifications when substituting with other manufacturers' 750V TO-247-4L devices.

FAQ

What is the recommended gate voltage range for operation?

The datasheet specifies a maximum gate-source voltage of -8 V to +19 V, with a recommended operating turn-off voltage of -4 V and a turn-on voltage of +15 V.