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Product Detailed Parameters
- Description：JFET N-CH 10MA 100MW ECSP1006-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：1.2 mA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：180 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
- Resistance - RDS(On)：200 Ohms
- Power - Max：100 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-XFDFN
- Supplier Device Package：ECSP1006-3
- Grade：-
- Qualification：-
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Overview
The EC3A04B is an N-channel junction silicon FET designed for low-frequency general-purpose amplifier and impedance conversion applications. It features a small gate-to-source leakage current (IGSS) of -1.0 nA maximum and a low input capacitance (Ciss) of 4 pF typical at VDS=10V, f=1MHz. The device supports a drain-to-source voltage (VDSX) of 30V and a drain current (ID) of 10mA. Static on-state resistance (RDS(on)) is 200 Ω maximum at VGS=0V. Forward transfer admittance (|yfs|) ranges from 3.0 to 5.0 mS at 1kHz. It operates within a junction temperature range up to 150°C and is housed in an ultraminiature ECSP1006-3 package.
Feature Summary
- Ultraminiature package facilitates miniaturization in end products
- Small gate-to-source leakage current (IGSS)
- Low input capacitance (Ciss) suitable for high-impedance circuits
- Halogen-free compliance
Applications
- Low-frequency general-purpose amplifier
- Impedance converter
- Infrared sensor applications
Procurement Notes
Verify the specific ordering suffix '-TL-H' against the manufacturer's official documentation to confirm tape-and-reel packaging details and lot traceability requirements. Ensure the component source matches SANYO Semiconductor Co.,Ltd. specifications before procurement. Cross-reference the datasheet revision number A0509-1/4 with the supplier's delivery specification to guarantee parameter consistency.
Selection Notes
Select this component when designing circuits requiring low input capacitance and minimal gate leakage for signal conditioning. The 30V drain-to-source rating and 10mA current limit define the operational boundaries. Consider the 200Ω on-resistance for switching or linear application constraints. Verify thermal dissipation capabilities relative to the 100mW power rating in the target PCB layout environment.
Part Context
This part belongs to the family of N-channel junction silicon FETs manufactured by SANYO Semiconductor. It is specifically engineered for analog signal processing tasks where low noise and high input impedance are critical. The device utilizes a specialized surface-mount package to support compact electronic designs.
Replacement Considerations
Consult the manufacturer's official cross-reference list for verified substitutes. When evaluating alternatives, match the pinout configuration (Gate, Source, Drain) and ensure the replacement meets the 30V VDS and 10mA ID limits. Verify that substitute components maintain comparable Ciss and IGSS specifications for circuit compatibility.
