EC3H02BA-TL-H

Overview

The EC3H02BA is an NPN epitaxial planar silicon transistor designed for VHF to UHF wide-band low-noise amplifier applications. It features a typical noise figure of 1.0 dB at 1 GHz and a forward transfer gain of 12 dB under standard test conditions. The device operates with a collector-to-emitter voltage rating of 10 V and supports a maximum continuous collector current of 70 mA. Key electrical characteristics include a cutoff frequency (fT) of 7 GHz, a DC current gain (hFE) ranging from 120 to 180, and a collector dissipation limit of 100 mW. The component utilizes an ultrasmall leadless package measuring 1.0 mm by 0.6 mm with a height of 0.5 mm.

Feature Summary

• Ultrasmall slim leadless package design suitable for space-constrained layouts
• Optimized for VHF to UHF wide-band low-noise amplifier operations
• Halogen-free compliance ensuring adherence to environmental standards

Applications

• VHF to UHF wide-band low-noise amplifier circuits
• General electronics equipment including communication devices
• Home appliances and AV equipment requiring RF signal processing

Procurement Notes

Verify the manufacturer origin as SANYO Semiconductor Co., Ltd. through official datasheets or authorized distributors. Confirm RoHS and halogen-free status via the specific product documentation. Ensure the ordering number matches ENA1064B for accurate identification. Validate that the intended application falls within general electronics scope rather than special high-reliability sectors.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1.0 dB at 1 GHz. Consider the 10 V collector-to-emitter voltage limit and 70 mA current capacity during biasing calculations. The 7 GHz cutoff frequency supports operation well into the UHF range. Evaluate thermal management capabilities given the 100 mW power dissipation constraint in the small footprint.

Part Context

This transistor belongs to the category of NPN epitaxial planar silicon transistors manufactured by SANYO Semiconductor. It is specifically engineered for radio frequency applications operating in the VHF and UHF bands. The device serves as a core active element in amplification stages where signal integrity and minimal noise addition are critical performance requirements.

Replacement Considerations

Consult the manufacturer's documentation for direct substitutes. Verify pinout compatibility and electrical parameter alignment before integrating alternative components into existing designs.