EC4401C-TL

EC4401C-TL

$0.14
  • Description:MOSFET N-CH 30V 150MA ECSP1008-4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk

SKU:c8d22967c95b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 150MA ECSP1008-4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
  • Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:1.58 nC @ 10 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:7 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):150mW (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:4-ECSP1008
  • Package / Case:4-UFDFN

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EC4401C-TL

Overview

The EC4401C is an N-channel silicon MOSFET designed for small signal switching and interface applications. It features a drain-to-source voltage of 30 V, a DC drain current of 0.15 A, and a pulse drain current of 0.6 A. The device supports low-voltage drive with a typical on-state resistance of 3.7 Ω at VGS=2.5V. Key electrical parameters include a gate charge of 1.58 nC, input capacitance of 7.0 pF, and turn-on delay time of 19 ns. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Ultrahigh-speed switching capability with low total gate charge.
  • Low on-state resistance optimized for efficient power handling.
  • Capable of operation with 2.5V gate drive signals.

Applications

  • Small signal switching circuits
  • Interface applications

Procurement Notes

Verify the specific package type (ECSP1008-4) and pinout configuration against the target PCB footprint before integration. Confirm that the absolute maximum ratings, particularly the allowable power dissipation of 0.15 W, align with the thermal management strategy of the final assembly. Ensure the component meets all required environmental compliance standards for the intended deployment region.

Selection Notes

Select this component when designing circuits requiring fast switching speeds within a compact form factor. The 30 V rating and 0.15 A continuous current limit define its operational boundaries. Consider the low gate charge for driving efficiency in high-frequency scenarios. Evaluate the thermal constraints carefully due to the low power dissipation rating in the small package.

Part Context

This part belongs to the category of N-channel silicon MOSFETs manufactured by onsemi. It is specifically engineered for small signal switching and interface tasks where space is limited. The device utilizes a surface-mount ECSP1008-4 package, providing a compact solution for modern electronic designs requiring reliable semiconductor switching components.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical ratings or package dimensions without validating pin configurations and absolute maximum ratings.

FAQ

What is the maximum allowable power dissipation?

The allowable power dissipation is 0.15 W at an ambient temperature of 25°C.

Does the EC4401C support 2.5V logic level driving?

Yes, the datasheet specifies it as a 2.5V drive device with a typical RDS(on) of 3.7 Ω at VGS=2.5V.

EC4401C-TLEC4401C-TL
$0.14
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