EC4409C-TL-H

$0.15

Description：NCH 1.8V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:e9513de5f471 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 1.8V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
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Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
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Mounting Type：-
Supplier Device Package：-
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EC4409C-TL-H

Overview

The onsemi EC4409C-TL-H is an NPN RF bipolar transistor designed for low-voltage applications. It features a maximum collector-emitter voltage of 3.5 V and a maximum DC collector current of 10 mA. The device operates up to a maximum frequency of 2 GHz with a typical cut-off frequency (fT) of 24 GHz at VCE=3V. It offers high gain, typically 17 dB at 2 GHz. Power dissipation is rated at 50 mW, with a maximum operating temperature of +150 °C. The component is housed in an ECSP package.

Feature Summary

Optimized for UHF to X Band low-noise amplifier and oscillator applications
Capable of operation with low supply voltages
Provides high gain performance at radio frequencies

Applications

UHF low-noise amplifiers
X Band low-noise amplifiers
RF oscillators

Procurement Notes

Verify the specific datasheet revision and compliance documentation directly from onsemi before integration. Confirm that the ECSP package dimensions and pinout match the target PCB layout requirements. Ensure thermal management strategies account for the 50 mW power dissipation limit under intended operating conditions.

Selection Notes

Select this component for designs requiring high-frequency performance at very low voltage levels. The 24 GHz fT supports operations well beyond the 2 GHz maximum rating. Consider the small ECSP footprint for space-constrained layouts. Verify compatibility with the required biasing network for optimal noise figure and gain.

Part Context

This part belongs to the onsemi RF bipolar transistor portfolio, specifically engineered for wireless communication systems. It represents a solution for miniaturized RF front-end modules where size and low voltage operation are critical constraints. The technology leverages epitaxial planar silicon processes for reliable high-frequency performance.