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Product Detailed Parameters
- Description：MOSFET P-CH 60V 4A 8ECH
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：85mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The onsemi ECH8305-TL-E is a P-channel silicon MOSFET designed for surface-mount applications. It features an 8-lead ECH package and supports a maximum drain-source voltage of 60 V with a continuous drain current of 4 A at ambient temperature. The device offers a power dissipation rating of 1.6 W (Ta) and operates up to a junction temperature of 150°C.
Feature Summary
- P-channel silicon MOSFET construction
- Surface-mount 8-lead ECH package
- General-purpose switching capability
Applications
- Low-side switching circuits
- General-purpose device applications
Procurement Notes
Verify component authenticity through authorized channels due to potential availability from secondary markets. Confirm datasheet revisions match design requirements. Check RoHS and REACH compliance status for specific manufacturing lots. Validate package markings against official documentation to ensure correct part identification.
Selection Notes
Select this component for designs requiring moderate voltage handling and current capacity in compact surface-mount layouts. Ensure thermal management strategies accommodate the 1.6 W dissipation limit. Verify that the 60 V rating exceeds circuit peak voltages. Consider the 8-lead ECH footprint constraints during PCB layout.
Part Context
This part belongs to onsemi's discrete semiconductor product line, specifically within the single FET and MOSFET category. It utilizes silicon technology for robust switching performance. The ECH package provides a standardized form factor for automated assembly processes in consumer and industrial electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Consult manufacturer cross-reference tools or engineering teams for verified alternatives if this component is obsolete or unavailable.
