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Product Detailed Parameters
- Description：MOSFET P-CH 12V 10A ECH8
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8308-P-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current of 10 A. The device utilizes an ECH surface-mount package with eight pins. Key electrical parameters include a maximum drain-source resistance of 33 mΩ, a typical gate charge of 26 nC at 4.5 V, and a maximum power dissipation of 1.6 W. It operates up to a junction temperature of +150 °C.
Feature Summary
- P-channel enhancement mode configuration for single-switch applications
- Low on-resistance design for efficient power switching
- Compact ECH surface-mount packaging for space-constrained designs
Applications
- DC-DC buck converter circuits
- Power management modules
- Load switch implementations
Procurement Notes
Verify the specific suffix against official documentation to confirm exact tape-and-reel specifications or marking variations. Ensure the ordering part number matches the required package variant and manufacturing date code. Cross-reference with the manufacturer's latest datasheet to validate pinout compatibility and thermal characteristics before finalizing procurement.
Selection Notes
Select this component for low-voltage applications requiring moderate current handling in a compact footprint. Evaluate the 33 mΩ on-resistance against thermal constraints to ensure the 1.6 W power dissipation limit is not exceeded under operating conditions. Confirm that the 12 V voltage rating provides sufficient headroom for the target circuit supply rails.
Part Context
This device belongs to onsemi's portfolio of discrete power MOSFETs designed for general-purpose switching. It complements other components in their power management lineup, offering silicon-based performance for cost-sensitive consumer and industrial electronics. The ECH package family supports various voltage and current ratings within a standardized form factor.
Replacement Considerations
Direct substitutes must match the 12 V rating, 10 A current capacity, and ECH-8 package. Verify equivalent Rds(on) and gate charge values to maintain switching performance. Consult the manufacturer's cross-reference guide for validated alternative part numbers.
