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Product Detailed Parameters
- Description：MOSFET P-CH 12V 9.5A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：16mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8309-TL-H is a P-channel enhancement-mode MOSFET from onsemi, housed in an 8-pin ECH surface-mount package. It features a drain-source breakdown voltage of 12 V and a continuous drain current rating of 9.5 A. The device exhibits a maximum on-resistance of 33 mΩ and a typical gate charge of 26 nC at 4.5 V. It supports a maximum junction temperature of +150 °C and operates with a gate-source voltage range of ±10 V.
Feature Summary
- Optimized for load switching applications
- Low on-resistance for efficient power handling
- Compatible with 1.8V drive logic levels
Applications
- Load switching circuits
- Power management modules
- Consumer electronics power stages
Procurement Notes
Verify the specific part number suffix against official datasheets to confirm package type and shipping configuration. Ensure compliance requirements such as halogen-free status are documented in the purchase order. Confirm thermal specifications match the target application's heat dissipation capabilities before finalizing procurement.
Selection Notes
Select this component when a low-voltage P-channel switch is required with high current capability. The 12 V rating suits 5 V and 3.3 V systems. Verify that the 33 mΩ resistance meets efficiency targets. Ensure the PCB layout accommodates the ECH package dimensions for proper thermal performance.
Part Context
This device belongs to onsemi's single FET MOSFET lineup designed for compact power solutions. The ECH package provides a small footprint suitable for space-constrained designs. It complements other low-voltage power switches in the manufacturer's portfolio for integrated power management.
Replacement Considerations
The ECH8308-TL-H is a confirmed substitute with similar 12 V, 10 A specifications. Verify pin compatibility and exact on-resistance values before substitution.
