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Product Detailed Parameters
- Description：MOSFET P-CH 30V 9A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8310-TL-H is a P-channel enhancement-mode MOSFET manufactured by onsemi. It utilizes trench technology to achieve low on-resistance, rated at -30V drain-source voltage and -7.5A continuous drain current. The device features an 8-pin ECH surface-mount package with dimensions of 2.9mm x 2.3mm x 0.9mm. Key electrical characteristics include a maximum Rds(on) of 25mΩ and a typical gate charge of 26nC at Vgs=4.5V. It supports a maximum operating temperature of +150°C and is designed for efficient switching applications.
Feature Summary
- Low on-resistance achieved through specialized trench technology
- Capable of 4V logic-level drive for efficient control
- Gate structure includes ESD protection mechanisms
- Compliant with Pb-Free, Halogen-Free, and RoHS standards
Applications
- Load switch circuits
- Protection circuits for lithium-ion batteries
- Motor driver interfaces
Procurement Notes
Verify the specific datasheet version corresponding to the ECH8310-TL-H part number to confirm exact electrical parameters, as similar models in the series may have different ratings. Ensure the ordering suffix matches the required packaging configuration. Confirm compliance requirements such as halogen-free status if applicable to your manufacturing process. Cross-reference the pinout diagram with your PCB layout to ensure correct orientation of the source and drain terminals.
Selection Notes
Select this component when a single P-channel MOSFET with -30V rating and approximately -7.5A current capacity is required. The 25mΩ on-resistance makes it suitable for applications prioritizing efficiency over minimal cost. Consider the 8-pin ECH package constraints regarding thermal dissipation and board space. Compare against other ECH series variants if higher or lower current/voltage ratings are needed for the specific design.
Part Context
This device belongs to the ECH series of power MOSFETs from onsemi, which are characterized by their compact footprint and high performance. The series leverages trench technology to minimize resistance while maintaining robust switching capabilities. These components are widely used in portable electronics and industrial systems where space-saving surface-mount solutions are critical for power management tasks.
Replacement Considerations
Direct substitutes within the same series include ECH8315-TL-H (-30V, -7.5A) and ECH8320-TL-H (-20V, -9.5A). Verify that the replacement part's voltage and current ratings meet or exceed the original design requirements. Check for identical pinouts and package dimensions to ensure mechanical compatibility without redesigning the PCB.
