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Product Detailed Parameters
- Description：MOSFET P-CH 20V 9.5A SOT28FL
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-28FL/ECH8
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8320-TL-H is a P-channel enhancement-mode MOSFET manufactured by onsemi. It features an 8-pin ECH surface-mount package with dimensions of 2.9mm length, 2.3mm width, and 0.9mm height. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 9.5 A. Key electrical parameters include a maximum on-resistance of 39 mΩ, a gate threshold voltage up to 1.3 V, and typical gate charge of 25 nC at 4.5 V. It operates within a temperature range up to +150 °C with a power dissipation rating of 1.6 W.
Feature Summary
- P-channel enhancement mode construction for high-side switching applications
- Low on-resistance design to minimize conduction losses
- Surface-mount ECH package optimized for automated assembly
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the manufacturer designation carefully, as this component is produced by onsemi following industry consolidation. Confirm the specific suffix 'TL-H' matches the required tape-and-reel packaging configuration. Ensure the ordering information aligns with the official datasheet specifications for the 8-ECH package variant to avoid compatibility issues in production.
Selection Notes
Select this component for low-voltage applications requiring efficient P-channel switching. Evaluate the thermal performance against the 1.6 W dissipation limit under expected load conditions. Consider the 20 V voltage rating margin relative to the system supply voltage. Verify that the gate drive levels are compatible with the specified threshold voltage characteristics.
Part Context
This part belongs to the family of surface-mount power MOSFETs designed for compact electronic designs. The ECH package provides a small footprint suitable for space-constrained boards. These devices are commonly utilized in consumer electronics and industrial equipment where efficient power control is necessary.
