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The ECH8504-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features an 8-pin ECH surface-mount package with dimensions of 2.9mm length, 2.3mm width, and 0.9mm height. The device supports a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 5 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 98 mΩ at Vgs = -4.5 V and Id = -3 A, with a typical gate charge of 11 nC at Vgs = 4.5 V. The component operates within a junction temperature range up to +150°C and has a maximum power dissipation of 1.3 W.
Verify the specific ordering suffix and tape-and-reel specifications against the official onsemi datasheet prior to procurement. Confirm that the ECH package footprint matches the target PCB layout. Ensure compliance with RoHS and REACH directives as stated in the manufacturer's environmental declarations. Cross-reference the part number with authorized distributors to confirm current availability status.
Select this component when a single or dual P-channel MOSFET is required in an 8-pin ECH package with a 20 V rating. The 98 mΩ on-resistance at -4.5 V gate drive makes it suitable for logic-level applications. Consider the 1.3 W power dissipation limit and thermal resistance characteristics for heat sinking requirements in the final design.
The ECH8504-TL-H belongs to onsemi's ECH series of surface-mount MOSFETs. This series utilizes a specialized leadless package designed for high-density mounting. The device is part of a family of low-voltage power switches intended for consumer electronics and industrial control applications where board space is limited.
Direct pin-compatible replacements may include other 8-pin ECH P-channel MOSFETs from onsemi with similar Vds and Rds(on) ratings, such as the ECH8654-TL-H. Verify that any substitute maintains the same package dimensions and electrical characteristics to ensure circuit compatibility.