ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 8A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：23mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.5W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-ECH
- Grade：-
- Qualification：-
Download product information
Overview
The ECH8601M-C-TL-H is an N-channel power MOSFET from onsemi, packaged in the compact ECSP-8 format. It features a drain-to-source voltage rating of 24V and a continuous drain current of 8A at 25°C. The device exhibits a low static on-resistance of 23mΩ, supporting efficient power switching with minimal conduction losses. Key electrical characteristics include a gate-to-source voltage limit of ±12V and a maximum power dissipation of 1.5W when mounted on a standard ceramic substrate. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- Integrated built-in gate protection resistor for enhanced drive stability
- Common-drain configuration suitable for low-side switching applications
- Built-in protection diode for simplified circuit design
Applications
- Li-ion battery charging switch circuits
- Battery discharging switch management
- Low-voltage DC-DC converter output stages
Procurement Notes
Verify the specific suffix 'C' against official datasheets to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance level distinct from the base model. Confirm the manufacturer source document directly rather than relying solely on distributor listings to ensure accurate part identification and specification alignment.
Selection Notes
Select this component for applications requiring low Rds(on) within a 24V system architecture. Ensure thermal management strategies account for the 1.5W dissipation limit on standard substrates. Verify that the 2.5V drive capability aligns with the control logic levels available in the target system design.
Part Context
This device belongs to onsemi's portfolio of low-voltage power MOSFETs designed for portable electronics. The ECSP package provides a small footprint ideal for space-constrained mobile devices. It complements other low-voltage solutions by offering high current density in a minimal outline.
Replacement Considerations
Cross-reference with similar 24V N-channel MOSFETs in ECSP-8 packages. Verify pinout compatibility and thermal resistance values before substitution. Check if alternative parts offer comparable Rds(on) and gate charge specifications.
