ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The ECH8651R-R-TL-HX is a dual N-channel enhancement mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage of 24 V and a continuous drain current of 10 A at 25°C. The device utilizes an 8-ECH surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical characteristics include a maximum on-resistance of 14 mΩ at 4.5 V gate drive and a typical gate charge of 24 nC at 10 V. The component supports a maximum power dissipation of 1.5 W and operates up to a junction temperature of +150°C.
Feature Summary
- Dual N-channel configuration for efficient circuit integration
- Logic-level gate drive capability for low-voltage control
- Compact 8-ECH surface-mount footprint for space-constrained designs
Applications
- DC-DC converter output stages
- Load switching applications
- Power management circuits
Procurement Notes
Verify the specific suffix 'TL-HX' against official manufacturer documentation to confirm tape-and-reel packaging specifications and moisture sensitivity level. Ensure compatibility with RoHS3 standards as indicated for the base product line. Cross-reference the full part number with authorized distributors to validate availability and authenticity before procurement.
Selection Notes
Select this component for applications requiring dual N-channel switching with a 24 V rating and 10 A current capacity. The 14 mΩ on-resistance at 4.5 V makes it suitable for logic-level driven systems. Consider the 1.5 W power dissipation limit and thermal management requirements when designing the PCB layout for the 8-ECH package.
Part Context
This part belongs to the ECH8651 series of dual N-channel MOSFET arrays from onsemi. It shares the same core die and electrical specifications as the ECH8651R-TL-H variant, differing primarily in packaging or reel configuration details defined by the manufacturer's ordering codes within the ECH family.
Replacement Considerations
The ECH8697R-TL-W is listed as a direct replacement alternative by the manufacturer. Verify pinout compatibility and electrical parameter alignment with the datasheet before substitution.
