ECH8651R-TL-H

Overview

The onsemi ECH8651R-TL-H is a dual N-channel enhancement-mode MOSFET array housed in an 8-ECH surface-mount package. It features a maximum drain-source voltage of 24 V and a continuous drain current of 10 A at 25°C. The device exhibits a maximum on-resistance of 14 mΩ at 4.5 V gate drive and a typical gate charge of 24 nC at 10 V. With a power dissipation rating of 1.5 W and a junction temperature range up to 150°C, it supports logic-level gate control for efficient switching applications.

Feature Summary

• Dual N-channel configuration within a compact 8-pin SMD footprint
• Logic-level gate operation enabling direct interface with standard digital controllers
• Low on-resistance characteristics optimized for high-efficiency power management

Applications

• DC-DC converter output stages
• Load switching circuits
• Power distribution networks

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm tape-and-reel packaging quantities and environmental compliance status. Ensure that the component matches the required RoHS3 specifications and moisture sensitivity level before integration into production workflows.

Selection Notes

Select this component when a dual N-channel topology is required within space-constrained designs. Evaluate the 14 mΩ on-resistance against thermal constraints to ensure the 1.5 W power dissipation limit is not exceeded under maximum load conditions.

Part Context

This part belongs to the ECH8651 series of dual MOSFET arrays from onsemi. It shares the 8-ECH package form factor with related models like the ECH8655R-TL-H but differs in electrical ratings, specifically offering higher current capacity compared to some variants in the same physical housing.

Replacement Considerations

The ECH8697R-TL-W is listed as a direct replacement option by the manufacturer.