ECH8653-TL-H

Overview

The ECH8653-TL-H is a dual N-channel enhancement mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 7.5 A. The device utilizes an 8-ECH surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum on-resistance of 20 mΩ at 4 A and 8 V, and a typical gate charge of 18.5 nC at 8 V. Maximum power dissipation is rated at 1.5 W, with a maximum operating junction temperature of 150 °C.

Feature Summary

• Dual N-channel configuration within a single compact surface-mount package
• Logic-level gate drive capability for efficient switching applications
• High thermal performance supporting operation up to 150 °C junction temperature

Applications

• DC-DC converter circuits
• Power management modules
• Motor control systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches project requirements. Check RoHS compliance status against current environmental regulations. Validate that the obsolete status does not impact long-term supply chain stability for production needs.

Selection Notes

Evaluate the 20 V rating and 7.5 A current capacity against circuit load requirements. Consider the 20 mΩ on-resistance for efficiency calculations. Ensure the 8-ECH package footprint fits the PCB layout constraints. Compare thermal dissipation capabilities with available board space for heat spreading.

Part Context

This component belongs to the ECH8653 series of dual N-channel MOSFET arrays from onsemi. It is designed for high-density power applications requiring multiple switches in a small form factor. The 8-ECH package provides a balance between electrical performance and spatial efficiency for modern electronic designs.

Replacement Considerations

ECH8697R-TL-W is listed as a similar replacement option.