ECH8654-TL-H

Overview

The onsemi ECH8654-TL-H is a P-channel enhancement mode MOSFET array housed in an 8-pin ECH surface-mount package. It features two isolated channels with a maximum drain-source voltage of 20 V and a continuous drain current of 5 A. The device exhibits a maximum on-resistance of 98 mΩ and a typical gate charge of 11 nC at 4.5 V. Operating within a temperature range up to +150 °C, it dissipates up to 1.3 W of power. The component utilizes silicon technology and supports a gate-source voltage range of -10 V to +10 V.

Feature Summary

• Dual isolated P-channel configuration for independent circuit control
• Logic-level gate drive capability for efficient switching applications
• Compact 8-ECH surface-mount footprint suitable for space-constrained designs

Applications

• Low-voltage load switching circuits
• Power management modules requiring dual channel isolation
• Portable electronic devices utilizing battery-powered systems

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested variant matches the required thermal and electrical ratings for the intended application environment before finalizing procurement orders.

Selection Notes

Select this component when dual isolated P-channel switching is required within a 20 V system. Ensure the design accounts for the 98 mΩ on-resistance to manage power dissipation effectively. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal performance.

Part Context

This part belongs to the ECH series of small-signal MOSFET arrays from onsemi. The series focuses on providing multiple transistor functions in minimal board space. The ECH8654-TL-H specifically addresses needs for compact P-channel solutions in portable and industrial electronics.

Replacement Considerations

RJK03M5DNS-00#J5 by Renesas Electronics Corporation is documented as a similar alternative.