ECH8654-TL-HQ

Overview

The onsemi ECH8654-TL-HQ is a dual P-channel enhancement-mode MOSFET housed in an 8-pin ECH surface-mount package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5 A per channel. The device exhibits a maximum on-resistance of 98 mΩ, with a typical gate charge of 11 nC at 4.5 V. Designed for high-temperature operation, it supports a maximum junction temperature of +150 °C and has a power dissipation rating of 1.3 W. The component utilizes silicon technology and includes two isolated transistor elements within the compact 2.9 mm x 2.3 mm x 0.9 mm footprint.

Feature Summary

• Dual P-channel configuration providing two independent switching paths within a single compact package.
• Enhanced thermal performance capability supporting operation up to +150 °C junction temperature.
• Low on-resistance design optimized for efficient power delivery and reduced conduction losses.
• Isolated transistor architecture ensuring independent control of each channel.

Applications

• High-side load switching in portable electronic devices
• Power management circuits in automotive infotainment systems
• Battery protection and distribution modules

Procurement Notes

Verify the specific suffix 'HQ' against official manufacturer documentation to confirm any distinct material or compliance variations compared to standard variants. Ensure the ordering information matches the exact part number required for your bill of materials to avoid substitution errors during assembly.

Selection Notes

Select this component when a dual P-channel solution is required in a small form factor. The 20 V rating suits low-voltage applications, while the 5 A current capacity handles moderate loads. Consider the 98 mΩ resistance for efficiency requirements and verify that the 1.3 W power dissipation meets the thermal design constraints of the target enclosure.

Part Context

This part belongs to the ECH series of dual MOSFETs from onsemi, designed for space-constrained applications. The ECH package provides a compact footprint suitable for dense PCB layouts. The ECH8654 variant specifically targets P-channel switching needs, complementing N-channel options like the ECH8655R in mixed-signal power designs.

Replacement Considerations

Direct substitutes include other dual P-channel MOSFETs in similar packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) before replacing. Check if alternative suffixes from the same family offer identical functionality.