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The onsemi ECH8655R-TL-H is a dual N-channel enhancement-mode MOSFET array housed in an 8-ECH surface-mount package. It features a maximum drain-source voltage of 24 V and a continuous drain current of 9 A at 25°C. The device exhibits a maximum on-resistance of 17 mΩ at 4.5 V gate drive. Key electrical parameters include a typical gate charge of 16.8 nC at 10 V, a maximum gate-source voltage range of -12 V to +12 V, and a maximum power dissipation of 1.4 W to 1.5 W. The component supports junction temperatures up to +150°C and utilizes silicon technology.
Verify the specific ordering suffix against official manufacturer documentation to confirm tape-and-reel packaging quantities and environmental compliance status. Ensure that the selected variant matches the required lead time and moisture sensitivity level for the assembly process. Cross-reference the datasheet revision history to validate parameter consistency before finalizing procurement orders.
Select this component when a compact dual N-channel solution is required for low-voltage, high-current applications. The 8-ECH package offers a small footprint suitable for dense PCB layouts. Consider the 17 mΩ on-resistance and 16.8 nC gate charge for optimizing switching losses and drive requirements in 3.3 V or 5 V logic systems.
The ECH8655R-TL-H belongs to the ECH8655R series of MOSFETs from onsemi. This series is characterized by its optimized performance for low-voltage switching applications. The part shares the same basic product number ECH8655 but differs in packaging and reel specifications based on the suffix. It is designed to complement other components in power management and signal switching circuits.
The Renesas RJK03M5DNS-00#J5 is listed as a similar replacement option. Verify pinout compatibility, electrical ratings, and package dimensions before substitution.