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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The ECH8656-TL-H is a surface-mount N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 7.5 A at 25°C. The device utilizes an 8-ECH package with dimensions of 2.9 mm length, 2.3 mm width, and 0.9 mm height. Key electrical parameters include a maximum on-resistance of 17 mΩ at 4.5 V gate drive, a typical gate charge of 10.8 nC at 4.5 V, and a maximum power dissipation of 1.3 W. The component supports a junction temperature up to +150°C and operates within a gate-source voltage range of ±10 V.
Feature Summary
- Dual N-channel configuration integrated into a compact 8-lead surface mount package for space-constrained designs.
- Logic-level gate threshold capability enabling efficient driving from low-voltage control signals.
- Low on-resistance characteristics optimized for minimizing conduction losses in power switching applications.
Applications
- DC-DC converter output stages
- Load switching circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest documentation before procurement. Confirm that the component status remains active, as availability may vary by region. Ensure that the requested package variant matches the design footprint requirements precisely. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications and compliance standards.
Selection Notes
Select this component when a dual N-channel MOSFET with a 20 V rating and 7.5 A current capacity is required in an 8-ECH package. Evaluate the thermal performance based on the 1.3 W power dissipation limit and the specific PCB copper area available for heat sinking. Compare the 17 mΩ on-resistance against system efficiency targets under the intended operating load conditions.
Part Context
This part belongs to the ECH series of surface-mount MOSFETs designed for high-density power applications. The 8-ECH package provides a small form factor suitable for automated assembly processes. The device integrates two independent N-channel transistors within a single encapsulation to reduce board space and simplify layout routing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings if considering alternative manufacturers without official substitution data.
