ECH8657-TL-H

ECH8657-TL-H

$0.87
  • Description:MOSFET 2N-CH 35V 4.5A 8ECH
  • Series:-

SKU:586f4249d001 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 35V 4.5A 8ECH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):35V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:59mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:230pF @ 20V
  • Power - Max:1.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-ECH
  • Grade:-
  • Qualification:-

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ECH8657-TL-H

Overview

The onsemi ECH8657-TL-H is a dual N-channel enhancement mode MOSFET array housed in an 8-ECH surface-mount package. It features a maximum drain-source voltage of 35 V and a continuous drain current of 4.5 A at 25°C. The device exhibits a maximum on-resistance of 59 mΩ at 2 A with a 10 V gate drive, alongside a typical gate charge of 4.5 nC at 10 V. Designed for high thermal performance, it supports a maximum power dissipation of 1.5 W and operates up to a junction temperature of +150 °C.

Feature Summary

  • Dual N-channel configuration within a compact 8-pin ECH footprint
  • Logic-level gate operation enabling direct interface with standard logic drivers
  • High-temperature capability supporting reliable operation up to +150 °C

Applications

  • Automotive anti-lock braking systems (ABS)
  • Industrial motor control circuits
  • Power management modules requiring low-voltage switching

Procurement Notes

Verify the specific suffix against official datasheets to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the ordering quantity aligns with manufacturer minimum order requirements for the selected packaging variant.

Selection Notes

Select this component for applications requiring dual N-channel isolation in a small outline package. Evaluate the 59 mΩ on-resistance against load current requirements to ensure thermal limits are not exceeded. Verify that the 35 V breakdown voltage provides adequate margin for the target circuit supply rails.

Part Context

This part belongs to the ECH series of dual MOSFET arrays from onsemi, designed for space-constrained surface-mount applications. The 8-ECH package offers a compact form factor suitable for dense PCB layouts while maintaining robust electrical characteristics for automotive and industrial environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.

ECH8657-TL-HECH8657-TL-H
$0.87
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