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The onsemi ECH8657-TL-H is a dual N-channel enhancement mode MOSFET array housed in an 8-ECH surface-mount package. It features a maximum drain-source voltage of 35 V and a continuous drain current of 4.5 A at 25°C. The device exhibits a maximum on-resistance of 59 mΩ at 2 A with a 10 V gate drive, alongside a typical gate charge of 4.5 nC at 10 V. Designed for high thermal performance, it supports a maximum power dissipation of 1.5 W and operates up to a junction temperature of +150 °C.
Verify the specific suffix against official datasheets to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure the ordering quantity aligns with manufacturer minimum order requirements for the selected packaging variant.
Select this component for applications requiring dual N-channel isolation in a small outline package. Evaluate the 59 mΩ on-resistance against load current requirements to ensure thermal limits are not exceeded. Verify that the 35 V breakdown voltage provides adequate margin for the target circuit supply rails.
This part belongs to the ECH series of dual MOSFET arrays from onsemi, designed for space-constrained surface-mount applications. The 8-ECH package offers a compact form factor suitable for dense PCB layouts while maintaining robust electrical characteristics for automotive and industrial environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.