ECH8659-TL-W

ECH8659-TL-W

  • Description:MOSFET 2N-CH 30V 7A SOT28
  • Series:-

SKU:5e76384d5536 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 7A SOT28
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:710pF @ 10V
  • Power - Max:1.3W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:SOT-28FL/ECH8
  • Grade:-
  • Qualification:-

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ECH8659-TL-W

Overview

The onsemi ECH8659-TL-W is a dual N-channel Power MOSFET array designed for surface-mount applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 7A. The device utilizes trench technology to achieve low on-resistance, specified as 24mΩ in general descriptions and 55mΩ at 4V gate drive in detailed parameters. Key electrical characteristics include a maximum power dissipation of 1.3W and a gate threshold voltage of 2.6V. The component is housed in an 8-SMD, Flat Leads package, suitable for compact circuit designs requiring efficient power switching.

Feature Summary

  • Dual N-Channel configuration for integrated power management
  • Trench technology implementation for minimized gate charge and low on-resistance
  • Logic Level Gate design optimized for 4V drive applications

Applications

  • Power switching circuits
  • DC-DC converter modules
  • Battery protection systems

Procurement Notes

Verify the specific ordering suffix and package variant against the official datasheet, as availability may vary by region. Confirm that the 8-SMD Flat Leads package matches your PCB footprint requirements. Check for any recent lifecycle status updates or obsolescence notices from onsemi before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET with 30V capability and 7A current handling is required. Ensure the 24mΩ or 55mΩ on-resistance specifications meet your thermal and efficiency constraints. Verify compatibility with 4V logic level drivers if used in low-voltage control environments.

Part Context

This part belongs to onsemi's Power MOSFET family utilizing trench technology. It is engineered to provide low on-resistance and reduced gate charge, enhancing efficiency in power conversion applications. The dual-channel architecture allows for space-saving designs in portable and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support or authorized distributors for cross-reference information regarding equivalent components.

ECH8659-TL-WECH8659-TL-W

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