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The onsemi ECH8659-TL-W is a dual N-channel Power MOSFET array designed for surface-mount applications. It features a drain-source breakdown voltage of 30V and a continuous drain current rating of 7A. The device utilizes trench technology to achieve low on-resistance, specified as 24mΩ in general descriptions and 55mΩ at 4V gate drive in detailed parameters. Key electrical characteristics include a maximum power dissipation of 1.3W and a gate threshold voltage of 2.6V. The component is housed in an 8-SMD, Flat Leads package, suitable for compact circuit designs requiring efficient power switching.
Verify the specific ordering suffix and package variant against the official datasheet, as availability may vary by region. Confirm that the 8-SMD Flat Leads package matches your PCB footprint requirements. Check for any recent lifecycle status updates or obsolescence notices from onsemi before finalizing procurement plans.
Select this component when a dual N-channel MOSFET with 30V capability and 7A current handling is required. Ensure the 24mΩ or 55mΩ on-resistance specifications meet your thermal and efficiency constraints. Verify compatibility with 4V logic level drivers if used in low-voltage control environments.
This part belongs to onsemi's Power MOSFET family utilizing trench technology. It is engineered to provide low on-resistance and reduced gate charge, enhancing efficiency in power conversion applications. The dual-channel architecture allows for space-saving designs in portable and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support or authorized distributors for cross-reference information regarding equivalent components.