ECH8660-TL-H

Overview

The ECH8660-TL-H is a complementary dual power MOSFET from onsemi, integrating an N-channel and a P-channel device within an 8-pin ECH package. It supports a maximum drain-to-source voltage of ±30 V and continuous drain currents of ±4.5 A. The component features low static drain-to-source on-state resistance (RDS(on)) of 59 mΩ at VGS=10V for both channels. Designed for high-speed switching applications, it operates with a total gate charge of 4.4 nC for the N-channel and 10 nC for the P-channel. The device complies with halogen-free standards and supports 4V drive logic levels.

Feature Summary

• Integrates N-channel and P-channel MOSFETs in a single compact package to enable high-density mounting
• Features low ON-resistance and high-speed switching characteristics for efficient power management
• Supports 4V drive logic levels for compatibility with various control interfaces
• Complies with halogen-free environmental standards

Applications

• High-density surface mount power circuits requiring complementary switching
• Low-voltage DC-DC conversion systems
• Motor driver stages utilizing complementary output configurations

Procurement Notes

Verify the specific ordering suffix TL-H confirms the tape-and-reel packaging format containing 3,000 pieces per reel. Ensure that the procurement documentation explicitly states Pb-Free and Halogen Free compliance status to meet environmental requirements. Confirm the manufacturer designation as Semiconductor Components Industries, LLC (onsemi) matches the required supply chain specifications.

Selection Notes

Select this component when a complementary N/P-channel configuration is required in a minimal footprint. The 30V rating and 4.5A current capacity suit low-voltage power distribution tasks. Evaluate the 59mΩ RDS(on) against thermal dissipation limits, noting the 1.3W per unit power rating on standard ceramic substrates. Consider the 4V drive capability if interfacing with lower voltage logic controllers.

Part Context

This part belongs to the ECH8660 series of complementary dual MOSFETs manufactured by onsemi. It utilizes the ECH8 surface-mount package, which measures approximately 2.9mm by 2.3mm. The series is designed to replace discrete N and P-channel solutions, reducing board space and simplifying assembly processes for low-voltage power applications.

Replacement Considerations

Direct substitutes must match the ±30V voltage rating, ±4.5A current capacity, and 8-pin ECH package dimensions. Verify that alternative components offer comparable RDS(on) values and switching speeds to maintain circuit performance.