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The ECH8661-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.5 A. The device utilizes an 8-pin ECH surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum drain-source resistance of 82 mΩ and a typical gate charge of 13 nC at 10 V. The component operates up to a maximum junction temperature of +150 °C.
Verify the specific suffix TL-H against the official datasheet to confirm pinout compatibility and tape-and-reel specifications. Confirm RoHS compliance status and material declarations prior to integration. Ensure the selected variant matches the required thermal dissipation capabilities for the target application environment.
Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate the 82 mΩ on-resistance against the expected load current to ensure acceptable power dissipation. Consider the 30 V rating relative to the system supply voltage to maintain adequate safety margins during transient conditions.
This part belongs to the ECH series of dual MOSFET arrays designed for efficient power switching. The ECH package provides a small footprint suitable for dense PCB layouts. It serves as a functional alternative to discrete dual-transistor implementations, simplifying assembly and reducing board space requirements in modern electronic systems.
ECH8667-TL-H is a documented substitute offering identical 30 V and 5.5 A ratings with comparable packaging. Verify pin-to-pin compatibility and electrical parameter alignment before substitution.