ECH8661-TL-H

ECH8661-TL-H

$1.34
  • Description:MOSFET N/P-CH 30V 7A/5.5A 8ECH
  • Series:-

SKU:6154d2a74c07 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 7A/5.5A 8ECH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A, 5.5A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:710pF @ 10V
  • Power - Max:1.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-ECH
  • Grade:-
  • Qualification:-

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ECH8661-TL-H

Overview

The ECH8661-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.5 A. The device utilizes an 8-pin ECH surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum drain-source resistance of 82 mΩ and a typical gate charge of 13 nC at 10 V. The component operates up to a maximum junction temperature of +150 °C.

Feature Summary

  • Dual-channel configuration integrating two isolated transistors within a single compact package.
  • Logic-level gate operation enabling direct drive from standard logic interfaces.
  • High thermal stability supporting reliable performance at elevated junction temperatures.

Applications

  • Low-side switching in automotive lighting circuits
  • Power management modules for industrial control systems
  • Battery protection circuits requiring high-current handling

Procurement Notes

Verify the specific suffix TL-H against the official datasheet to confirm pinout compatibility and tape-and-reel specifications. Confirm RoHS compliance status and material declarations prior to integration. Ensure the selected variant matches the required thermal dissipation capabilities for the target application environment.

Selection Notes

Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate the 82 mΩ on-resistance against the expected load current to ensure acceptable power dissipation. Consider the 30 V rating relative to the system supply voltage to maintain adequate safety margins during transient conditions.

Part Context

This part belongs to the ECH series of dual MOSFET arrays designed for efficient power switching. The ECH package provides a small footprint suitable for dense PCB layouts. It serves as a functional alternative to discrete dual-transistor implementations, simplifying assembly and reducing board space requirements in modern electronic systems.

Replacement Considerations

ECH8667-TL-H is a documented substitute offering identical 30 V and 5.5 A ratings with comparable packaging. Verify pin-to-pin compatibility and electrical parameter alignment before substitution.

ECH8661-TL-HECH8661-TL-H
$1.34
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