ECH8662-TL-H

$0.20

Description：ECH8662 - MOSFET 2 N-CHANNEL ARR
Series：*

SKU:2d844596d51a Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：ECH8662 - MOSFET 2 N-CHANNEL ARR
Series：*
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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ECH8662-TL-H

Overview

The ECH8662-TL-H is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 30 V and a continuous drain current of 4.5 A at 25 °C. The device utilizes the 8-ECH surface-mount package, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum drain-source on-resistance of 59 mΩ at 10 V gate drive and a typical gate charge of 4.4 nC at 10 V. The component supports a maximum power dissipation of 1.5 W and operates up to a junction temperature of +150 °C.

Feature Summary

Dual-channel configuration integrating both N-channel and P-channel logic-level MOSFETs within a single compact package.

Applications

DC-DC converter circuits requiring complementary switching elements.

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet before finalizing procurement plans for regulated markets.

Selection Notes

Select this component when space-constrained designs require matched N/P-channel pairs with low gate charge characteristics. Ensure the 30 V rating aligns with system voltage requirements and verify thermal management capabilities for the 1.5 W dissipation limit.

Part Context

This part belongs to the ECH series of small-signal MOSFETs designed for high-density surface-mount applications. The 8-ECH package provides a footprint optimized for automated assembly processes while maintaining electrical performance suitable for portable electronics and battery-powered devices.