ECH8663R-TL-H

Overview

The onsemi ECH8663R-TL-H is a dual N-channel enhancement mode MOSFET housed in an 8-pin ECH surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 8 A. The device exhibits a low on-resistance, with a maximum value of 20.5 mΩ at Vgs = 4.5 V and 28 mΩ at Vgs = 2.5 V. Key electrical parameters include a gate-source voltage rating of ±12 V, a power dissipation of 1.4 W per unit, and a maximum junction temperature of +150 °C. The component integrates internal protection diodes and gate resistors.

Feature Summary

• Supports 2.5 V drive capability for low-voltage applications
• Integrates built-in protection diodes and gate resistors
• Designed as a common-drain configuration for efficient switching

Applications

• Lithium battery charge/discharge switch circuits
• Low-power electronic systems requiring efficient switching
• Power management modules in portable devices

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation before integration into environmentally regulated assemblies. Cross-reference the datasheet revision date to ensure alignment with current design requirements and reliability standards.

Selection Notes

Select this component when a dual N-channel configuration with low on-resistance at 2.5 V drive is required. Ensure the thermal design accommodates the 1.4 W power dissipation limit per unit. Verify that the 30 V breakdown voltage meets the circuit's maximum operating conditions. Consider the integrated gate resistor for simplified driver design.

Part Context

This part belongs to the ECH8655R series family from onsemi, designed for compact power switching applications. The ECH package provides a small footprint suitable for space-constrained designs. The dual N-channel architecture allows for complementary switching or parallel current handling within a single component.

Replacement Considerations

Direct substitutes must match the 30 V/8 A rating, ECH-8 package, and dual N-channel configuration. Verify pinout compatibility and on-resistance characteristics. Check for equivalent gate threshold voltage ranges to ensure proper logic level interfacing without redesigning the gate drive circuitry.