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The onsemi ECH8674-TL-H is a P-channel enhancement-mode MOSFET array housed in an 8-pin ECH surface-mount package. It features two isolated channels with a maximum drain-source voltage of 20 V and a continuous drain current of 5 A. The device exhibits a maximum on-resistance of 98 mΩ, a typical gate charge of 11 nC at 4.5 V, and a maximum power dissipation of 1.3 W. It operates within a temperature range up to +150 °C.
Verify the specific datasheet revision and ordering suffix to ensure compatibility with required thermal and electrical specifications. Confirm that the ECH package dimensions align with the target PCB footprint. Cross-reference the manufacturer's latest documentation to validate RoHS compliance status and recommended soldering profiles for reliable assembly.
Select this component when dual isolated P-channel switching is required within a 20 V system. The 5 A current rating and 98 mΩ resistance support moderate load handling. Ensure the application benefits from the compact ECH footprint compared to larger discrete packages while maintaining adequate thermal management for the 1.3 W dissipation limit.
This part belongs to onsemi's lineup of surface-mount power MOSFETs designed for portable and industrial electronics. The ECH series provides high-density integration for power management tasks. As a P-channel device, it serves as a high-side switch solution, complementing N-channel options in mixed-signal power distribution networks.
ECH8654-TL-H: Similar P-channel dual MOSFET in ECH package but rated for 20 V and 5 A; verify pinout and parameter alignment.