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The ECH8675-TL-H is a P-Channel Power MOSFET manufactured by onsemi. It features an 8-pin ECH surface-mount package and supports a maximum drain-source voltage of 20 V with a continuous drain current of 4.5 A. The device utilizes silicon technology and is designed for surface mount installation. Key electrical characteristics include a maximum power dissipation of 1.3 W, a typical gate charge of 11 nC at 4.5 V, and a maximum operating temperature of +150 °C.
Verify component authenticity through authorized onsemi distributors or certified partners. Confirm the specific suffix matches the required package and tape-and-reel specifications. Check for obsolescence status as this part may be discontinued. Ensure storage conditions comply with moisture sensitivity level requirements prior to assembly.
Select this component when a dual P-channel solution is required in an 8-pin ECH footprint. Compare the 20 V rating and 4.5 A current capacity against circuit load requirements. Evaluate the 1.3 W power dissipation limit against thermal constraints. Consider the 11 nC gate charge for driving capability compatibility with available controllers.
This device belongs to onsemi's discrete semiconductor product line, specifically within the FET and MOSFET array category. It serves as a standalone switching element rather than an integrated circuit. The ECH package provides a standardized form factor for surface-mount assembly processes common in modern consumer and industrial electronics manufacturing.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for direct replacements or verify if newer generations of the ECH series offer pin-compatible alternatives.