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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.7A, 3.5A
- Rds On (Max) @ Id, Vgs：55mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：955pF @ 20V, 790pF @ 20V
- Power - Max：1.5W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-ECH
- Grade：-
- Qualification：-
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Overview
The onsemi ECH8690-TL-H is a complementary dual power MOSFET in an 8-pin ECH (SOT-28FL) surface-mount package. It integrates an N-channel and a P-channel device within a single component, utilizing Trench technology to achieve low on-state resistance. The N-channel section supports a drain-source voltage of 60 V with a typical RDS(on) of 42 mΩ at VGS=10V, while the P-channel section provides -60 V breakdown with a typical RDS(on) of 73 mΩ at VGS=-10V. Both channels feature built-in protection diodes and are designed for efficient switching applications.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel MOSFETs in one package
- Trench technology implementation for minimized on-state resistance
- Integrated protection diodes included in both channel configurations
Applications
- Low on-resistance switching requirements
- Power management circuits requiring complementary logic-level drive
- Applications necessitating compact footprint for dual-channel control
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm shipping format and compliance status. Confirm that the requested variant matches the required tape and reel specifications for automated assembly processes. Ensure all environmental compliance certifications align with project requirements before finalizing procurement orders.
Selection Notes
Select this component when a compact solution for complementary switching is required. Evaluate thermal dissipation capabilities based on the specified ceramic substrate mounting conditions. Verify gate drive voltage levels match the 4V drive design characteristics to ensure optimal performance and minimize switching losses during operation.
Part Context
This part belongs to onsemi's ECH series of complementary dual MOSFETs. It utilizes the SOT-28FL/ECH8 mechanical case outline, designated as CASE 318BF. The device represents a specialized integration of two distinct transistor types into a unified surface-mount package for space-constrained designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources or authorized distributors for verified cross-reference data before considering alternative components.
