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The ECH8691-TL-W is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a drain-source voltage (Vds) rating of 24 V and a continuous drain current (Id) of 11 A. The device utilizes an ECH surface-mount package with eight pins, measuring 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 13.3 mΩ and a typical gate charge of 10 nC at Vgs = 4.5 V. The component supports a maximum junction temperature of +150 °C and operates within a gate-source voltage range of -12.5 V to +12.5 V.
Verify the specific suffix TL-W against the manufacturer's official datasheet to confirm pinout compatibility and tape-and-reel specifications. Ensure the sourcing channel provides original components to avoid counterfeit risks, as surface-mount packages require precise handling during assembly.
Select this component when a 24 V N-channel MOSFET with low Rds(on) is required for compact designs. The ECH package offers a small footprint suitable for space-constrained PCB layouts. Verify that the 11 A current rating meets the peak load requirements of the target application circuit.
This part belongs to onsemi's ECH series of N-channel MOSFETs, designed for high-efficiency power switching applications. The series emphasizes low on-resistance and compact packaging to support modern power density requirements in consumer and industrial electronics.
Consult onsemi's official cross-reference tools or distributor databases for verified equivalent parts. Ensure any substitute matches the 24 V Vds, 11 A Id, and 13.3 mΩ Rds(on) specifications while maintaining the 8-pin ECH package form factor.