ECH8693R-TL-W

Overview

The ECH8693R-TL-W is a dual N-channel power MOSFET manufactured by onsemi, housed in an 8-ECH surface-mount package. It features a drain-source breakdown voltage (Vds) of 24 V and supports a continuous drain current (Id) of 14 A. The device exhibits a maximum on-resistance (Rds(on)) of 7 mΩ at specified gate-source voltages. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 1.3 V, a total gate charge (Qg) of 13 nC, and a forward transconductance of 8 S. The component operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 1.4 W.

Feature Summary

• Dual N-Channel Configuration: Integrates two independent enhancement-mode N-channel MOSFETs within a single compact package for space-efficient circuit design.
• Low On-Resistance: Achieves a typical Rds(on) of 7 mΩ to minimize conduction losses and improve thermal efficiency in power switching applications.
• High Current Capability: Supports a continuous drain current of 14 A, suitable for demanding load requirements in portable and industrial electronics.

Applications

• Battery protection circuits in mobile devices and power tools
• Load switching in consumer electronics and automotive systems
• Power management modules requiring compact dual-switch solutions

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before procurement. Confirm RoHS compliance status and REACH SVHC declarations as required by your supply chain regulations. Ensure the 8-ECH package dimensions match your PCB footprint exactly. Cross-reference the part number with authorized distributors to avoid counterfeit components. Check for any recent product change notices that might affect pinout or electrical specifications.

Selection Notes

Select this component when a dual N-channel configuration is required within a limited board area. The 24 V rating and 14 A current capacity make it suitable for low-voltage battery-powered applications. Consider the 7 mΩ Rds(on) for efficiency-critical designs where heat dissipation is a concern. Verify that the 13 nC gate charge aligns with your driver capabilities for optimal switching performance. Ensure the operating temperature range meets your environmental requirements.

Part Context

This part belongs to the ECH8693R series of dual N-channel MOSFETs from onsemi. It shares the 8-ECH package form factor with other variants in the family, such as the ECH8655R-TL-H, which offers different current and resistance characteristics. The series is designed for high-density power switching applications in portable and industrial equipment.

Replacement Considerations

Direct substitutes must match the 24 V, dual N-channel specification and 8-ECH package. Verify equivalent Rds(on), Id, and Qg parameters. Consult distributor databases for cross-reference lists provided by manufacturers like Renesas or Infineon for compatible alternatives.

FAQ

What is the maximum junction temperature for the ECH8693R-TL-W?

The maximum operating junction temperature is +150 °C.

Does the ECH8693R-TL-W have a common source configuration?

No, it is a dual N-channel enhancement mode MOSFET with separate channels, not a common-drain or common-source array.

What is the typical gate charge (Qg) for this device?

The typical gate charge is 13 nC.