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The EFC2J004NUZTDG is a dual N-channel enhancement-mode power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a WLCSP package. The device is designed for low-voltage applications, featuring a drain-source voltage (Vds) of 12 V and a continuous drain current (Id) of 32 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 2.5 mΩ at a gate-source voltage (Vgs) of 4.5 V. The component supports an operating temperature range from -55°C to +150°C and has a power dissipation rating of 1.6 W.
Verify the specific ordering suffix to confirm the tape and reel packaging quantity, as variations exist within the product family. Confirm RoHS compliance status through official documentation before integration. Check for end-of-life notices or production change notifications to ensure long-term supply stability for the design.
Select this component when a dual N-channel MOSFET with high current capability is required in a minimal footprint. Ensure the application voltage does not exceed the 12 V drain-source rating. Verify that the thermal management strategy accommodates the 1.6 W power dissipation limit in the intended enclosure environment.
This part belongs to onsemi's EFC series of power MOSFETs, which are engineered for space-constrained consumer and industrial applications. The series emphasizes high current density and low resistance in advanced wafer-level packages, targeting efficient power delivery in modern mobile and IoT devices.
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate alternative dual N-channel WLCSP MOSFETs with compatible Vds, Id, and Rds(on) specifications if replacement is necessary.