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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 23A 6WLCSP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta)
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.5W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFBGA, WLCSP
- Supplier Device Package：6-WLCSP (1.77x3.05)
- Grade：-
- Qualification：-
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Overview
The EFC3J018NUZTDG is a dual N-channel power MOSFET manufactured by onsemi, designed for lithium battery protection applications. It utilizes silicon technology and is housed in a WLCSP-4 surface-mount package. The device features a drain-source breakdown voltage of 24 V and supports a continuous drain current of 6 A. Its typical on-resistance is specified at 45 mOhms, with a gate-source voltage range of -12 V to +12 V. The threshold voltage is 1.3 V, and it operates within a temperature range of -55 C to +150 C, dissipating up to 1.6 W of power.
Feature Summary
- Dual N-channel configuration optimized for battery protection circuits
- Low profile WLCSP-4 packaging for compact board layouts
- Enhancement mode operation with standard logic-level compatibility
Applications
- Lithium battery protection modules
- Portable electronic device power management
- Consumer electronics load switching
Procurement Notes
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS compliance documentation matches specific manufacturing lots. Request original manufacturer test reports to validate electrical parameters against datasheet specifications before integration into production designs.
Selection Notes
Evaluate thermal performance under maximum load conditions given the small WLCSP-4 footprint. Ensure gate drive signals remain within the specified -12 V to +12 V limits to prevent dielectric breakdown. Compare on-resistance values against system efficiency requirements to determine suitability for low-voltage battery applications.
Part Context
This component belongs to onsemi's specialized MOSFET portfolio targeting portable power solutions. It complements other devices in the EFC series designed for space-constrained environments. The part represents a transition toward miniaturized power switching elements suitable for modern mobile hardware architectures.
Replacement Considerations
Check for direct pin-compatible substitutes within the same EFC family or equivalent WLCSP-4 dual N-channel MOSFETs from other manufacturers. Verify that alternative parts meet the 24 V breakdown and 6 A current requirements while maintaining similar on-resistance characteristics.
