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Product Detailed Parameters
- Description：NCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The EFC4601R-M-TR is an N-channel MOSFET from onsemi's 2.5V Drive Series, designed for low-voltage gate drive applications. It features a 4-pin configuration to ensure straightforward PCB mounting and easy integration into power circuits. The device encapsulation enhances ruggedness, making it suitable for various switching applications requiring efficient control at reduced voltage thresholds.
Feature Summary
- Optimized for 2.5V gate drive series applications
- N-channel MOSFET architecture for power switching
- 4-pin configuration for straightforward PCB mounting
- Enhanced encapsulation for improved ruggedness
Applications
- Low-voltage power switching circuits
- General-purpose transistor applications
- Power management integrated circuit designs
Procurement Notes
Verify the specific datasheet for detailed electrical characteristics and absolute maximum ratings before integration. Confirm package dimensions and thermal requirements against your PCB layout constraints. Ensure compatibility with your system's gate drive voltage levels, as this component belongs to the 2.5V drive series. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and supply chain reliability.
Selection Notes
Select this component when a low-voltage N-channel MOSFET is required for efficient switching in compact designs. The 4-pin package facilitates easier assembly compared to more complex configurations. Consider its suitability for applications where a 2.5V gate drive threshold aligns with your controller's output capabilities. Evaluate the ruggedness provided by the encapsulation method for environments requiring enhanced physical durability.
Part Context
This component falls under onsemi's portfolio of discrete semiconductors, specifically within the FET and MOSFET category. It represents the company's focus on providing optimized solutions for power management and switching applications. The product line emphasizes efficiency and ease of integration for modern electronic designs requiring reliable single FET performance.
Replacement Considerations
Consult official onsemi documentation or authorized distributor databases for verified substitute part numbers. Do not assume functional equivalence based solely on package type or general specifications. Verify that any alternative component meets the same 2.5V drive series requirements and N-channel architecture.
