EFC4612R-S-TR

$0.56

Description：MOSFET N-CH 24V 6A EFCP
Series：-

SKU:f93fc1c29607 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 6A EFCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：-
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：4-XFBGA
Supplier Device Package：EFCP1313-4CC-037
Grade：-
Qualification：-

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EFC4612R-S-TR

Overview

The EFC4612R-S is a dual N-channel power MOSFET designed for 1-2 cell lithium-ion battery protection. It features a low on-state resistance and supports a source-to-source voltage of 24 V with a DC source current of 6 A. The device operates with gate drive voltages as low as 2.5 V, making it suitable for portable machine power switches. Key electrical parameters include a maximum RSS(on) of 72 mΩ at VGS = 2.5 V and IS = 3 A. Total gate charge is typically 7 nC at VGS = 4.5 V. The component is housed in a WLCSP4 package measuring 1.3 x 1.3 mm.

Feature Summary

Dual N-channel configuration with common-drain topology
Gate protected against electrostatic discharge events
Capable of operation with low gate drive voltage of 2.5 V

Applications

Lithium-ion battery charging switch
Lithium-ion battery discharging switch
Power switches for portable machines

Procurement Notes

Verify the specific ordering suffix to confirm packaging details. The standard tape and reel quantity is 5000 units. Ensure the selected variant matches the required RoHS compliance and halide-free status for environmental regulations. Confirm the package type corresponds to the WLCSP4 outline before finalizing procurement orders.

Selection Notes

Select this component when designing circuits for single or dual-cell lithium-ion battery management systems requiring compact form factors. Evaluate the thermal resistance characteristics relative to the intended PCB copper area. Ensure the gate drive signal amplitude meets the minimum threshold for the desired on-state resistance performance level.

Part Context

This device belongs to onsemi's portfolio of power MOSFETs optimized for battery protection applications. It utilizes a WLCSP4 package to minimize board space consumption. The part number EFC4612R-S identifies the specific dual N-channel configuration within this product line.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility without redesigning the host circuit.

FAQ

What is the maximum source-to-source breakdown voltage?

The maximum source-to-source breakdown voltage (V(BR)SSS) is 24 V.

How does the on-state resistance vary with gate voltage?

The static source-to-source on-state resistance decreases as the gate-to-source voltage increases, ranging from a maximum of 72 mΩ at 2.5 V to 45 mΩ at 4.5 V under specified test conditions.