EFC4C002NLTDG

Overview

The EFC4C002NLTDG is a dual N-channel MOSFET manufactured by onsemi, utilizing Silicon technology in a WLCSP-6 package. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 19 A. The device exhibits a low on-resistance (Rds(on)) of 5 mΩ at both channels. Gate-source voltage limits are ±20 V, with a threshold voltage (Vgs(th)) of 1.3 V. Total gate charge (Qg) is 18 nC. Power dissipation (Pd) is rated at 2.5 W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual channel configuration for space-efficient integration
• Low on-resistance for improved power efficiency
• Enhancement mode operation

Applications

• Portable electronics requiring compact power switching
• Battery-powered devices needing efficient DC-DC conversion
• Load switching applications in mobile hardware

Procurement Notes

Verify the specific ordering suffix 'LTDG' against official onsemi documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement.

Selection Notes

Select this component when a dual N-channel MOSFET in a wafer-level package is required for high-current applications up to 19 A. Ensure the 30 V rating aligns with system voltage requirements and that the thermal management strategy supports the 2.5 W power dissipation limit within the specified operating temperature range.

Part Context

This part belongs to onsemi's portfolio of small-signal and logic level MOSFETs designed for portable consumer electronics. The WLCSP-6 form factor distinguishes it from larger surface-mount packages, offering minimal footprint for dense PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Consult onsemi's official cross-reference tools or distributor databases for verified alternatives.