EFC6611R-TF

EFC6611R-TF

  • Description:MOSFET 2N-CH 12V 27A 6CSP
  • Series:-

SKU:ddebfe5c2104 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 12V 27A 6CSP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:100nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-CSP (1.77x3.54)
  • Grade:-
  • Qualification:-

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EFC6611R-TF

Overview

The EFC6611R-TF is an N-channel depletion-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current rating of 27 A. The device utilizes a CSP package with six pins for surface mount installation. Key electrical parameters include a maximum drain-source resistance of 6.3 mΩ, a gate threshold voltage range from 0.5 V to 1.3 V, and a maximum power dissipation of 2.5 W. The component operates at temperatures up to +150 °C and contains two chip elements in a common-drain configuration.

Feature Summary

  • Depletion mode operation for normally-on functionality
  • Low on-state resistance for efficient power handling
  • High thermal stability suitable for demanding environments

Applications

  • Power management circuits requiring normally-on switches
  • Automotive electronic systems
  • Industrial control applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant automotive qualification standards required for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component when a normally-on N-channel switch is required within a 12 V system. Ensure the design accommodates the depletion mode characteristics where the device conducts at zero gate-source voltage. Verify that the package thermal performance supports the expected power dissipation under worst-case operating conditions.

Part Context

This part belongs to the family of low-voltage, high-current depletion-mode MOSFETs designed for robust switching applications. The specific model integrates advanced trench technology to minimize conduction losses while maintaining reliable performance in compact surface-mount packages suitable for automated assembly processes.

Replacement Considerations

Consult official substitution guides for verified equivalent parts. Do not assume compatibility based solely on pin count or voltage ratings without verifying threshold voltage and on-resistance specifications.

EFC6611R-TFEFC6611R-TF

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