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The EFC6618R-A-TF is an N-channel depletion-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current of 27 A. The device utilizes a CSP package with six pins for surface mount installation. Key electrical parameters include a maximum drain-source resistance of 6.3 mΩ, a gate threshold voltage range from 0.5 V to 1.3 V, and a maximum power dissipation of 2.5 W. It operates at temperatures up to +150 °C and contains two chip elements in a common-drain configuration.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the component matches the required depletion-mode characteristics for the intended circuit topology. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component based on its 12 V rating and 27 A current capacity for low-voltage power switching. The depletion mode characteristic necessitates careful gate biasing to ensure proper turn-off functionality. Evaluate the thermal requirements against the 2.5 W dissipation limit and the 6.3 mΩ resistance to maintain efficiency in the target application environment.
This component belongs to the EFC series of power MOSFETs designed for robust performance in space-constrained environments. The depletion mode variant provides distinct advantages for fail-safe applications where a default conducting state is required. It complements enhancement-mode devices in mixed-signal power management circuits.
Direct substitutes must match the 12 V, 27 A, and depletion-mode specifications. Verify pinout compatibility and thermal resistance values. Consult manufacturer cross-reference lists for equivalent parts with identical electrical characteristics and package dimensions.