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The EKG1020 is a 100V, 20A N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a typical RDS(ON) of 33 mΩ at VGS = 10 V and ID = 10 A. The device includes a built-in gate protection diode and is RoHS compliant. It operates within a junction temperature range of -55 °C to 150 °C and offers a maximum power dissipation of 55 W at TC = 25 °C.
Verify the component against the official Sanken Electric datasheet (EKG1020, FKG1020-DSE Rev.1.1). Confirm that the specific package variant matches your design requirements, as the EKG1020 corresponds to the TO220-3L package while the FKG1020 uses TO220F-3L. Ensure compliance with all specified absolute maximum ratings during integration.
Select this component for low-voltage switching applications requiring high current handling. Evaluate thermal management strategies carefully, as the device supports up to 55 W of power dissipation only when mounted on an appropriate heatsink at 25 °C case temperature. Consider derating factors for ambient temperatures exceeding standard operating limits.
This part belongs to the EKG/FKG series of N-channel Trench Power MOSFETs from Sanken Electric. These components are designed for general-purpose electronic equipment and apparatus. They are not intended for use in aerospace, nuclear power control systems, or medical devices classified as Class III or higher due to reliability constraints.
FKG1020 serves as a direct functional substitute within the same product family, differing primarily in the physical package type.