EKG1020

EKG1020

  • Description:LOW RON MOSFET 100V/20A/0.033
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube

SKU:35e461a7124e Category: Brand:

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Product Detailed Parameters

  • Description:LOW RON MOSFET 100V/20A/0.033
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:12.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):55W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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EKG1020

Overview

The EKG1020 is a 100V, 20A N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a typical RDS(ON) of 33 mΩ at VGS = 10 V and ID = 10 A. The device includes a built-in gate protection diode and is RoHS compliant. It operates within a junction temperature range of -55 °C to 150 °C and offers a maximum power dissipation of 55 W at TC = 25 °C.

Feature Summary

  • N-channel Trench Power MOSFET architecture
  • Built-in gate protection diode
  • RoHS compliant construction

Applications

  • Low voltage DC motor driver
  • Solenoid driver

Procurement Notes

Verify the component against the official Sanken Electric datasheet (EKG1020, FKG1020-DSE Rev.1.1). Confirm that the specific package variant matches your design requirements, as the EKG1020 corresponds to the TO220-3L package while the FKG1020 uses TO220F-3L. Ensure compliance with all specified absolute maximum ratings during integration.

Selection Notes

Select this component for low-voltage switching applications requiring high current handling. Evaluate thermal management strategies carefully, as the device supports up to 55 W of power dissipation only when mounted on an appropriate heatsink at 25 °C case temperature. Consider derating factors for ambient temperatures exceeding standard operating limits.

Part Context

This part belongs to the EKG/FKG series of N-channel Trench Power MOSFETs from Sanken Electric. These components are designed for general-purpose electronic equipment and apparatus. They are not intended for use in aerospace, nuclear power control systems, or medical devices classified as Class III or higher due to reliability constraints.

Replacement Considerations

FKG1020 serves as a direct functional substitute within the same product family, differing primarily in the physical package type.

EKG1020EKG1020

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