EKI06075

$0.45

Description：MOSFET N-CH 60V 78A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube

SKU:9c3c10446ba3 Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 78A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.3mOhm @ 39A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：53.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3810 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：116W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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EKI06075

Overview

The EKI06075 is a 60 V N-channel Trench Power MOSFET manufactured by Sanken Electric USA Inc. It features a maximum continuous drain current of 78 A and a typical static drain-to-source on-resistance of 5.1 mΩ at VGS = 10 V, with a maximum rating of 6.6 mΩ. The device exhibits a low total gate charge of 26.9 nC at VGS = 4.5 V, enabling high-speed switching capabilities. It supports a 4.5 V gate drive voltage and includes 100% Unclamped Inductive Load (UIL) testing. The component operates within a junction temperature range up to 150 °C and utilizes a TO220-3L package.

Feature Summary

Low on-resistance for efficient power conduction
High-speed switching capability
Capable of operation with 4.5 V gate drive
100% Unclamped Inductive Load tested

Applications

DC-DC converters
Synchronous rectification
Power supplies

Procurement Notes

Verify the specific revision status before procurement, as the datasheet indicates this part is not recommended for new designs. Confirm that the TO220-3L package dimensions and thermal characteristics align with your system requirements. Ensure compliance with RoHS standards and verify that the application does not involve aerospace, nuclear, or medical equipment where liability restrictions apply.

Selection Notes

Select this component when a 60 V breakdown voltage and high current handling are required in a through-hole format. The low gate charge makes it suitable for applications prioritizing switching efficiency. Consider the thermal resistance values for heat dissipation planning. Evaluate the synchronous rectification suitability based on the body diode reverse recovery characteristics provided in the electrical specifications.

Part Context

This N-channel MOSFET belongs to Sanken's trench technology lineup designed for general-purpose electronic equipment. It is intended for use in home appliances, office equipment, and telecommunication apparatus. The product adheres to RoHS directives and is manufactured using lead-free materials. It is distinct from automotive-grade modules like the SAM4 series due to its general-purpose classification.