EKI10126

$0.59

Description：MOSFET N-CH 100V 66A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube

SKU:58d4a34b6e34 Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 66A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：11.6mOhm @ 33A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs：88.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6420 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：135W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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EKI10126

Overview

The EKI10126 is a 100 V N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a maximum continuous drain current of 66 A and a low on-resistance of 12.1 mΩ max at VGS = 10 V, with a typical value of 8.8 mΩ. The device supports 4.5 V gate drive and exhibits a total gate charge of 45.2 nC at VGS = 4.5 V. It operates within a junction temperature range up to 150 °C and is housed in a TO220-3L package.

Feature Summary

Capable of operation with a 4.5 V gate drive voltage for flexible control logic integration.
Features low total gate charge to enable high-speed switching performance.
Provides low static drain-to-source on-resistance for improved power efficiency.

Applications

DC-DC converters
Synchronous rectification circuits
General power supplies

Procurement Notes

Verify the component revision against the official datasheet before procurement. Confirm that the TO220-3L package dimensions match your board layout requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected load conditions.

Selection Notes

Select this component when a 100 V rating and 66 A continuous current capability are required. Consider the 4.5 V gate drive compatibility if driving from lower voltage logic sources. Evaluate the thermal dissipation needs based on the 135 W power dissipation rating at 25 °C case temperature.

Part Context

This part belongs to the Sanken Electric N-channel Trench Power MOSFET series. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The product line targets general-purpose electronic equipment and power supply applications requiring robust current handling capabilities.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 132 A, provided the pulse width is less than or equal to 100 µs and the duty cycle is less than or equal to 1%.