EKI10300

EKI10300

$0.27
  • Description:MOSFET N-CH 100V 34A TO220
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube

SKU:914e9f9180ed Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 100V 34A TO220
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:28.8mOhm @ 17.1A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs:36.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2540 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):90W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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EKI10300

Overview

The EKI10300 is a single N-channel Trench Power MOSFET manufactured by Sanken Electric Co., Ltd. It features a 100 V drain-to-source breakdown voltage and a continuous drain current of 34 A at 25 °C case temperature. The device achieves a maximum static drain-to-source on-resistance of 28.8 mΩ at VGS = 10 V and ID = 17.1 A, with a typical value of 20.2 mΩ. Total gate charge is specified as 36.5 nC at VGS = 10 V and 16.9 nC at VGS = 4.5 V. The component utilizes a TO-220-3L package and supports a maximum operating junction temperature of 150 °C.

Feature Summary

  • Capable of operation with a 4.5 V gate drive voltage for low-side switching applications
  • Features low total gate charge to enable high-speed switching performance
  • Includes an integrated body diode with defined reverse recovery characteristics

Applications

  • DC-DC converters
  • Synchronous rectification circuits
  • General power supplies

Procurement Notes

Verify the specific revision number (e.g., Rev.1.4) against the manufacturer's official documentation before procurement. Confirm that the TO-220-3L physical dimensions match the target PCB footprint. Ensure the design accounts for the derating curves provided in the datasheet to maintain safe operating area limits under actual thermal conditions.

Selection Notes

Select this component when a 100 V rating and 34 A continuous current capability are required. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the intended power dissipation levels. Consider the 4.5 V gate drive compatibility if interfacing with standard logic-level drivers without additional level shifting circuitry.

Part Context

This part belongs to the Sanken Electric USA Inc. lineup of discrete semiconductor devices. It is classified as a single N-channel Trench Power MOSFET designed for general-purpose electronic equipment. The product is RoHS compliant and manufactured using lead-free materials. It is explicitly marked as not recommended for new designs by the manufacturer.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the source material. Consult Sanken Electric sales representatives directly for approved alternative components or updated series replacements.

FAQ

What is the maximum pulsed drain current supported by the EKI10300?

The device supports a pulsed drain current of 68 A, provided the pulse width is less than or equal to 100 µs and the duty cycle does not exceed 1%.

How is the gate terminal identified in the TO-220-3L package?

In the TO-220-3L package, the Gate terminal corresponds to pin (1), the Source to pin (3), and the Drain to pin (4).

EKI10300EKI10300
$0.27
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