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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.2A EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：200mA
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：115pF @ 10V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
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Overview
The EM6J1T2R is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -200 mA. The device supports low-voltage drive with a typical Rds(on) of 2.4 Ω at Vgs = -1.2 V. Key electrical parameters include a gate-source voltage rating of ±10 V, a threshold voltage of 1 V, and a total gate charge of 1.4 nC. Power dissipation is rated at 150 mW, with operating temperatures ranging from -55 °C to +150 °C.
Feature Summary
- Low voltage drive capability optimized for 1.2 V operation
- Dual P-channel configuration in a compact SMD package
- Independent transistor elements to minimize interference
Applications
- Battery protection circuits
- Load switching applications
- Power management modules
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the manufacturer's datasheet before procurement. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the EMT6 package dimensions match your PCB footprint design constraints.
Selection Notes
Select this component for applications requiring dual P-channel switching with low gate charge and small form factor. Compare Rds(on) values at your specific Vgs levels against alternative devices. Verify that the 150 mW power dissipation rating accommodates your thermal design under maximum load conditions.
Part Context
This part belongs to the EM6J1 series of complex transistors designed for general-purpose switching. It utilizes micro-processing technology to achieve low on-resistance within a miniature surface-mount enclosure. The series targets diverse market needs through compact packaging solutions.
Replacement Considerations
The EMX2 is listed as a similar level replacement with the same EMT6 package and NPN+NPN polarity, though it is not recommended for new designs. Verify pinout compatibility and electrical parameter alignment when substituting.
