EM6K6T2R

FET, MOSFET Arrays Overview

The EM6K6T2R is a dual N-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a SOT-563-6 surface-mount package with six terminals. Key electrical parameters include a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 300 mA. The device exhibits a typical on-resistance (Rds(on)) of 1 Ohm, with a gate-source voltage range of -8 V to 8 V and a threshold voltage (Vgs(th)) of 1 V. Power dissipation is rated at 150 mW. Switching characteristics include rise and fall times of 10 ns, a turn-off delay of 15 ns, and a minimum forward transconductance of 400 mS. It operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SOT-563-6 surface mount package
• Low on-resistance optimized for small signal switching applications
• Enhancement mode operation with standard logic-level gate drive compatibility

FET, MOSFET Arrays Applications

• Small signal switching circuits
• Low power digital logic interfaces
• Portable electronic device power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix T2R confirms the reel packaging format required for automated assembly processes. Confirm RoHS compliance status through official manufacturer documentation prior to integration into environmentally regulated assemblies. Ensure the component matches the exact pinout and thermal characteristics specified in the datasheet for the target PCB layout design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation within a minimal footprint. The 20 V rating suits low-voltage logic systems. Evaluate the 1 Ohm on-resistance against load requirements to ensure acceptable conduction losses. Consider the 150 mW power dissipation limit when designing thermal management strategies for dense circuit boards.

FET, MOSFET Arrays Part Context

This part belongs to the EM6K series of dual MOSFETs from ROHM Semiconductor. These devices are designed for space-constrained applications where multiple switching elements are needed. The series utilizes silicon technology to provide reliable performance in consumer electronics and industrial control systems requiring efficient small-signal handling.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the SOT-563-6 package, 20 V Vds, and dual N-channel configuration. Verify equivalent Rds(on) and Id ratings to ensure circuit performance parity. Check pin compatibility to avoid redesigning the footprint.